Relaxation time broadening on emission spectrum of a Zn‐dopedp‐type GaAs injection laser
نویسندگان
چکیده
منابع مشابه
GaAs/GaAIAs Injection Laser
Absrmct-The temporal coherence of a stripe-geometry doubleheterojunction GaAs/GaAlAs laser operating CW at room temperature was determined. A heterodyne detection scheme was used involving the mixing of the laser field with a frequency-shifted and time-delayed image of itself in an interferometer. Because the laser device oscillated in several longitudinal modes, the autocorrelation functio...
متن کاملEffect of spectral broadening and electron-hole scattering on carrier relaxation in GaAs quantum dots
Luminescence efficiency in quantum dots has been a matter of some controversy recently. Theoretically, poor efficiency has been predicted owing to the phonon bottleneck in carrier relaxation, while slightly enhanced luminescence has been reported in several experiments. The approach of this letter differs from previous theoretical work in that the scattering rates are computed self-consistently...
متن کاملTime-resolved measurement of copper emission spectrum excited by a low-pressure argon laser-induced plasma.
A laser-induced plasma generated with a pulsed Nd:YAG laser under evacuated conditions has complicated structures both temporally and spatially. The time-resolved spectra of copper in three different wavelength regions were observed in detail for elucidating the excitation mechanisms of many atomic/ionic copper emission lines. The emission intensities of copper emission lines, measured in a tim...
متن کاملاثر تونل زنی تزریقی بر پاسخ مدولاسیون لیزرهای نقطه کوانتومی
In this paper, modulation bandwidth characteristics of InGaAs/GaAs quantum dot (QD) laser were theoretically investigated. Simulation was done by using the fourth order Runge-Kutta method. Effect of carrier relaxation life time, temperature and current density on characteristics of tunneling injection QD laser (TIL) and conventional QD laser (CL) were analyzed. Results showed that tunneling inj...
متن کاملTime-resolved cathodoluminescence study of carrier relaxation in GaAs/ AlGaAs layers grown on a patterned GaAs(001) substrate
We have examined the kinetics of carrier relaxation in three-dimensionally confined GaAs/AlGaAs layers obtained by growth on prepatterned GaAs~001! with time-resolved cathodoluminescence ~CL!. Time-delayed CL spectra at 87 K reveal that ~i! relaxation of hot carriers into the largest 3D confined regions occurs on a time scale of a few hundred ps during the onset of luminescence, and ~ii! the lu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1983
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.94520